English
Language : 

RGT8BM65D Datasheet, PDF (5/12 Pages) Rohm – 650V 4A Field Stop Trench IGBT
RGT8BM65D
lElectrical Characteristic Curves
Data Sheet
Fig.1 Power Dissipation vs. Case Temperature
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
Case Temperature : Tc [ºC]
Fig.2 Collector Current vs. Case Temperature
10
8
6
4
 2
Tj≦175ºC
VGE≧15V
0
0 25 50
75 100 125 150 175
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
100
10µs
10
1
100µs
0.1
0.01
1
TC= 25ºC
Single Pulse
10
100
1000
Collector To Emitter Voltage : VCE[V]
Fig.4 Reverse Bias Safe Operating Area
16
14
12
10
8
6
4
2 Tj≦175ºC
VGE=15V
0
0
200
400
600
800
Collector To Emitter Voltage : VCE[V]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/11
2014.05 - Rev.A