SH8J65 Datasheet, PDF (4/6 Pages) Rohm – 4V Drive Pch+Pch MOSFET

SH8J65
Data Sheet
100
90
80
70
60
50
40
30
20
10
0
Ta=25°C
Pulsed
I_D= -7.0A
I_D= -3.5A
5
10
15
GATE-SOURCE VOLTAGE : -V_GS[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
10000
1000
100
t_d(off)
t_f
Ta=25°C
V_DD= -15V
V_GS=-10V
R_G=10Ω
Pulsed
10
t_r
1
t_d(on)
0.01
0.1
1
10
DRAIN-CURRENT : -I_D[A]
Fig.11 Switching Characteristics
10
8
6
4
Ta=25°C
V_DD= -15V
2
I_D= -7.0A
R_G=10Ω
Pulsed
0
0
10
20
30
40
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
10000
Ciss
1000
Crss
100
Coss
10
0.01
0.1
1
Ta=25°C
f=1MHz
V_GS=0V
10
100
GATE-SOURCE VOLTAGE : -V_DS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
1000
100
Operation in this area is limited by R_DS(ON)
(V_GS=-10V)
PW=100us
10
PW = 10ms
1
PW=1ms
0.1
0.01
Ta = 25°C
Single Pulse
MOUNTED ON SERAMIC BOARD
0.1
1
10
DC operation
100
DRAIN-SOURCE VOLTAGE : -V_DS[V]
Fig.14 Maximum Safe Operating Aera
10
1
0.1
0.01
0.001
0.001
0.01
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 89.3 °C/W
<Mounted on a SERAMIC board>
0.1
1
10
PULSE WIDTH : Pw(s)
100
1000
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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2009.12 - Rev.A