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| RYM002N05 Datasheet, PDF (4/6 Pages) Rohm – 0.9V Drive Nch MOSFET | |||
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RYM002N05
Data Sheet
10
VDS= 10V
Pulsed
1
0.1
0.01
Ta=ï ï25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
1
DRAIN-CURRENT : ID[A]
Fig.10 Forward Transfer Admittance
vs. Drain Current
1
VGS=0V
Pulsed
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=ï ï 25°C
0.01
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
5000
4000
3000
2000
Ta=25°C
Pulsed
ID= 0.01A
ID= 0.20A
1000
0
0
2
4
6
8
GATE-SOURCE VOLTAGE : VGS[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
100
td(off)
tf
Ta=25°C
VDD=25V
VGS=4.5V
RG=10â¦
Pulsed
10
td(on)
tr
1
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.13 Switching Characteristics
4
3
2
Ta=25°C
VDD=25V
1
ID= 0.2A
RG=10â¦
Pulsed
0
0
0.5
1
1.5
TOTAL GATE CHARGE : Qg [nC]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
1000
Ta=25°C
f=1MHz
VGS=0V
100
Ciss
10
Crss
Coss
1
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
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©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.07 - Rev.A
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