R5009ANJ_09 Datasheet, PDF (4/6 Pages) Rohm – 10V Drive Nch MOSFET

R5009ANJ
100
VGS= 0V
10 ^Pulsed
1
Ta= 125°C
Ta= 75°C
0.1
Ta= 25°C
Ta= -25°C
0.01
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : V_SD (V)
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
10000
1000
100
Crss
Ciss
Coss
10
Ta= 25°C
f= 1MHz
VGS= 0V
1
0.1
1
10
100
1000
DRAIN-SOURCE VOLTAGE : V_DS (V)
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
15
Ta= 25°C
VDD= 250V
10 ^{ID= 9A}
RG= 10Ω
Pulsed
5
Data Sheet
0
0 5 10 15 20 25 30
TOTAL GATE CHARGE : Q_g (nC)
Fig.12 Dynamic Input Characteristics
1000
100
10
0.1
Ta= 25°C
di / dt= 100A / µs
VGS= 0V
Pulsed
1
10
100
REVERSE DRAIN CURRENT : I_DR (A)
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
10000
1000
100
tf
td(off)
Ta= 25°C
VDD= 250V
VGS= 10V
RG= 10Ω
Pulsed
10
td(on)
tr
1
0.1
1
10
100
DRAIN CURRENT : I_D (A)
Fig.14 Switching Characteristics
1
Ta = 25°C
Single Pulse : 1Unit
0.1 ^{Rth（ch-a）（t） = ｒ（t）×Rth（ch-a）}
Rth（ch-a） = 42.4°C/W
0.01
0.001
0.0001
0.0001 0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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2009.02 - Rev.A