FEDD56V16161N-01 Datasheet, PDF (4/44 Pages) Rohm – SYNCHRONOUS DYNAMIC RAM

FEDD56V16161N-01
MSM56V16161N
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on Input/Output Pin Relative to VSS
VIN, VOUT
–0.5 to VCC+0.5
V
VCC Supply Voltage
VCC
–0.5 to 4.6
V
VCCQ Supply Voltage
VCCQ
–0.5 to 4.6
V
Power Dissipation (Ta=25°C)
PD
1000
mW
Short Circuit Output Current
IOS
50
mA
Storage Temperature
Tstg
–55 to 150
°C
Operating Temperature
Topr
0 to 70
°C
Notes: 1. Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
2. Functional operation should be restricted to recommended operating condition.
3. Exposure to higher than recommended voltage for extended periods of time could affect device
reliability.
4. The voltages are referenced to VSS.
Recommended Operating Conditions (1/2)
Parameter
Symbol
Min.
Ta= 0 to 70C
Typ.
Max.
Unit Note
Power Supply Voltage (Core)
VCC
3.0
3.3
3.6
V
1
Power Supply Voltage (I/O)
VCCQ
3.0
3.3
3.6
V
1
Ground
VSS, VSSQ
0
0
0
V
Notes: 1. The voltages are referenced to VSS
2. The power supply voltages should input stable voltage. The power supply voltages should not input
oscillated voltage. If voltages
Recommended Operating Conditions (2/2)
Ta= 0 to 70C
Parameter
Symbol
Min.
Max.
Unit
Note
Input High Voltage
VIH
2.0
VCC + 0.3
V
1, 2
Input Low Voltage
VIL
0.3
0.8
V
1, 3
Notes: 1. The voltages are referenced to VSS.
2. The input voltage is VCC + 0.5V when the pulse width is less than 20ns (the pulse width is with respect
to the point at which VCC is applied).
3. The input voltage is  0.5V when the pulse width is less than 20ns (the pulse width respect to the point at
which VSS and VSSQ are applied).
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