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BD822EFV Datasheet, PDF (4/5 Pages) Rohm – Silicon Monolithic Integrated Circuit


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˓ Cautions in using the IC
1. Absolute maximum ratings
We are careful enough for quality control about this IC. So, there is no problem under normal operation, excluding that it exceeds the absolute maximum ratings. However, this IC
might be destroyed when the absolute maximum ratings, such as impressed voltages or the operating temperature range, is exceeded, and whether the
destruction is short circuit mode or open circuit mode cannot be specified. Please take into consideration the physical countermeasures for safety, such as fusing, if a particular
mode that exceeds the absolute maximum rating is assumed.
2. Reverse polarity connection
Connecting the power line to the IC in reverse polarity (from that recommended) will damage the part. Please utilize the direction protection device as a
diode in the supply line and motor coil line.
3. Power supply line
Due to return of regenerative current by reverse electromotive force, using electrolytic and ceramic suppress filter capacitors (0.1µF) close to the IC power
input terminals (Vcc and GND) are recommended. Please note the electrolytic capacitor value decreases at lower temperatures and examine to dispense
physical measures for safety.
And, for ICs with more than one power supply, it is possible that rush current may flow instantaneously due to the internal powering sequence and delays.
Therefore, give special consideration to power coupling capacitance, power wiring, width of GND wiring, and routing of wiring.
4. GND line
Please keep the GND line the lowest potential always, and check the GND voltage when transient voltages are connected to the IC.
5. Thermal design
Do not exceed the power dissipation (Pd) of the package specification rating under actual operation, and please design enough temperature margins.
This product has exposed the frame to the back side of the package, but please note that it is assumed to use heat radiation efficiency by the heat
radiation for this part. Please take the heat radiation pattern on not only the surface of the substrate but also the back of the substrate widely.
6. Short circuit mode between terminals and wrong mounting
Do not mount the IC in the wrong direction and displacement, and be careful about the reverse-connection of the power connector. Moreover, this IC
might be destroyed when the dust short the terminals between them or GND.
7. Radiation
Strong electromagnetic radiation can cause operation failures.
8. ASO (Area of Safety Operation)
Do not exceed the maximum ASO and the absolute maximum ratings of the output driver.
9. TSD (Thermal Shut-Down)
The TSD is activated when the junction temperature (Tj) exceeds Tjmax, and the output terminal is switched to OPEN.
The guarantee and protection of set are not purpose. Therefore, please do not use this IC after TSD circuit operates, nor use it for assumption that
operates the TSD circuit.
10. Capacitor between output driver and GND
If a large capacitor is connected between the output driver and GND, this IC might be destroyed when Vcc becomes 0V or GND, because the electric
charge accumulated in the capacitor flows to the output driver. Please set said capacitor to smaller than 0.1µF.
11. Inspection by the set circuit board
The stress might hang to IC by connecting the capacitor to the terminal with low impedance. Then, please discharge electricity in each and all
process. Moreover, when attaching or detaching from jig in the inspection process, please turn off the power before mounting the IC, and turn on after
mounting the IC, and vice versa. In addition, please take into consideration the countermeasures for electrostatic damage, such as giving the earth in
assembly process, transportation or preservation.
12. Input terminal
This IC is a monolithic IC, and has P+ isolation and P substrate for the element separation. Therefore, a parasitic PN junction is firmed in this P-layer
and N-layer of each element. For instance, the resistor or the transistor is connected to the terminal as shown in the figure below. When the GND
voltage potential is greater than the voltage potential at Terminals A on the resistor, at Terminal B on the transistor, the PN junction operates as a
parasitic diode. In addition, the parasitic NPN transistor is formed in said parasitic diode and the N layer of surrounding elements close to said
parasitic diode. These parasitic elements are formed in the IC because of the voltage relation. The parasitic element operating causes the interference
of circuit operation, then the wrong operation and destruction. Therefore, please be careful so as not to operate the parasitic elements by impressing to
input terminals lower voltage than GND (P substrate). Please do not apply the voltage to the input terminal when the power-supply voltage is
not impressed. Moreover, please impress each input terminal lower than the power-supply voltage or equal to the specified range in the guaranteed
voltage when the power-supply voltage is impressing.
Terminal-A
P+
Parasitic
element
Resistor
Terminal-A
Terminal-B C
P P+
Parasitic
element
P+
P-Substrate
GND
Parasitic
element
Transistor(NPN)
B
E
P P+
P-Substrate
GND
GND
Terminal-B
BC
E
Surrounding
elements
Parasitic
element
GND
Simplified structure of IC
13. Earth wiring pattern
If small signal GND and large current GND exist, disperse their pattern. In addition, for voltage change by pattern wiring impedance and large current
not to change voltage of small signal GND, each ground terminal of IC must be connected at the one point on the set circuit board. As for GND of external
parts, it is similar to the above-mentioned.


REV. A