US6M1 Datasheet, PDF (3/8 Pages) Rohm – Small switching

Transistors
zElectrical characteristics (Ta=25°C)
<Tr2. P-ch MOSFET>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
−
10 µA VGS=12V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −20 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS= −20V, VGS=0V
Gate threshold voltage
VGS (th) −0.7 − −2.0 V VDS= −10V, ID= −1mA
−
Static drain-source on-state
resistance
∗
RDS (on)
−
−
280 390
ID= −1A, VGS= −4.5V
310 430 mΩ ID= −1A, VGS= −4V
570 800
ID= −0.5A, VGS= −2.5V
Forward transfer admittance
Yfs ^∗ 0.7
−
−
S ID= −0.5A, VDS= −10V
Input capacitance
Ciss
− 150 −
pF VDS= −10V
Output capacitance
Coss
−
20
−
pF VGS=0V
Reverse transfer capacitance Crss
− 20 − pF f=1MHz
Turn-on delay time
td (on) ^∗
−
9
−
ns ID= −0.5A, VDD −15V
Rise time
tr ^∗ −
8
−
ns VGS= −4.5V
Turn-off delay time
td (off) ^∗
−
25
−
ns RL=30Ω
Fall time
tf ^∗ −
10
−
ns RGS=10Ω
Total gate charge
Qg ^∗ −
2.1
−
nC VDD −15V RL=15Ω
Gate-source charge
Qgs ^∗ −
0.5
−
nC VGS= −4.5V RGS=10Ω
Gate-drain charge
Qgd ^∗ −
0.5
−
nC ID= −1A
∗Pulsed
zBody diode characteristics (Source-Drain) (Ta=25°C)
<Tr2. P-ch MOSFET>
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
Test Conditions
VSD ^∗ −
− −1.2 V IS= −0.4A, VGS=0V
US6M1
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