UMG6NTR Datasheet, PDF (3/7 Pages) Rohm – NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

EMG6 / UMG6N / FMG6A
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Grounded emitter propagation
characteristics
10
V_CE=5V
1
0.1
Ta=100ºC
25ºC
-40ºC
0.01
0.001
0
0.5
1
1.5
2
BASE TO EMITTER VOLTAGE : V_BE (V)
Data Sheet
Fig.2 Grounded emitter output
characteristics
50
I_B= 200μA
40
30
20
180μA
160μA
140μA
120μA
100μA
80μA
60μA
10
0
0
40μA
20μA
Ta=25ºC _0A
5
10
COLLECTOR TO EMITTER
VOLTAGE : V_CE (V)
Fig.3 DC Current gain
vs. Collector Current
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
COLLECTOR CURRENT : I_C (mA)
COLLECTOR CURRENT : I_C (mA)
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2012.06 - Rev.B