UM6K1N_1 Datasheet, PDF (3/4 Pages) Rohm – 2.5V Drive Nch+Nch MOS FET

Transistors
UM6K1N
9
VGS=4V
8
Pulsed
7
ID=100mA
6
5
ID=50mA
4
3
2
1
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.7 Static Drain-Source On-State
Resistance vs. Channel Temperature
0.5
0.2
Ta=−25°C
0.1
25°C
0.05
75°C
125°C
0.02
0.01
0.005
VDS=3V
Pulsed
0.002
0.001
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.8 Forward Transfer Admittance vs.
Drain Current
200m
100m
50m
VGS=0V
Pulsed
20m
Ta=125°C
10m
75°C
5m
25°C
−25°C
2m
1m
0.5m
0.2m
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9 Reverse Drain Current vs.
Source-Drain Voltage ( )
200m
100m
50m
Ta=25°C
Pulsed
20m
10m VGS=4V
0V
5m
2m
1m
0.5m
0.2m
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Reverse Drain Current vs.
Source-Drain Voltage ( )
50
Ta=25°C
f=1MHZ
VGS=0V
20
Pulsed
Ciss
10
5
Coss
Crss
2
1
0.5
0.1 0.2 0.5 1 2
5 10 20 50
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
1000
500
tf
td(off)
200
100
50
tr
20 _td(on)
10
5
Ta=25°C
VDD=5V
VGS=5V
RG=10Ω
2
0.1 0.2 0.5 1 2
5 10 20 50 100
DRAIN CURRENT : ID (mA)
Fig.12 Switching Characteristics
zSwitching characteristics measurement circuit
V_GS
I_D
D.U.T.
R_G
V_DS
R_L
V_DD
Fig.13 Switching Time Test Circuit
Pulse Width
V_GS
50%
10%
90%
V_DS
10%
50%
10%
td(on) t_r
ton
90%
tf
t_d(off)
t_off
90%
Fig.14 Switching Time Waveforms
Rev.B
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