SM6K2 Datasheet, PDF (3/5 Pages) Rohm – Switching (60V, 200mA)

Transistors
SM6K2
10
Ta=125°C
75°C
25°C
−25°C
VGS=10V
Pulsed
10
Ta=125°C
75°C
25°C
−25°C
VGS=4V
Pulsed
7
6
5
4
ID=200mA
3
Ta=25°C
Pulsed
1.0
0.01
0.1
1.0
DRAIN CURRENT : I D (A)
Fig.4 Static drain-source on-State
resistance vs. drain current ( Ι )
2
100mA
1
1.0
0.01
0.1
1.0
DRAIN CURRENT : I D (A)
0₀
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static drain-source on-state
Fig.6 Static drain-source on-state
resistance vs. drain current ( ΙΙ )
resistance vs. gate-source voltage
3.0
VGS=10V
1
VGS=0V
Pulsed
Pulsed
2.5
ID=200mA
2.0
100mA
1.5
0.1
Ta=125°C
75°C
25°C
−25°C
0.01
10
1 _VGS=10V
0.1
0.01
Ta=25°C
Pulsed
0V
1._−050 _{−25 0 25 50 75 100 125 150}
CHANNEL TEMPERATURE : Tch (°C)
Fig.7 Static drain-source on-state
resistance vs. channel temperature
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.8 Reverse drain current vs.
source-drain voltage ( Ι )
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9 Reverse drain current vs.
source-drain voltage ( ΙΙ )
1
Ta=−25°C
0.1
25°C
75°C
125°C
0.01
VGS=10V
Pulsed
0.001
0.001
0.01
0.1
1
DRAIN CURRENT : ID (A)
Fig.10 Forward transfer admittance
vs. drain current
100
1000
Ta=25°C
Ta=25°C
f=1MHz
VDD=30V
VGS=0V
VGS=10V
tf ^RG=10Ω
Pulsed
100
Ciss
10
td(off)
Coss
10
Crss
td(on)
tr
1
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical capacitance
vs. drain-source voltage
1
1
10
100
1000
DRAIN CURRENT : ID (mA)
Fig.12 Switching characteristics