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SH8M2_09 Datasheet, PDF (3/4 Pages) Rohm – 4V Drive Nch+Pch MOSFET | |||
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SH8M2
P-ch
ï¬Electrical characteristics (Ta=25ï°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
â
â ±10 μA VGS= ±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS â30 â
â
V ID= â1mA, VGS=0V
Zero gate voltage drain current IDSS
â
â
â1 μA VDS= â30V, VGS=0V
Gate threshold voltage
VGS (th) â1.0 â â2.5 V VDS= â10V, ID= â1mA
â
Static drain-source on-state
resistance
RDS (on)â
â
â
65 90 mΩ ID= â3.5A, VGS= â10V
100 140 mΩ ID= â1.75A, VGS= â4.5V
120 165 mΩ ID= â1.75A, VGS= â4V
Forward transfer admittance Yfs â 1.8 â
â
S VDS= â10V, ID= â1.75A
Input capacitance
Ciss
â 490 â
pF VDS= â10V
Output capacitance
Coss
â 110 â
pF VGS= 0V
Reverse transfer capacitance Crss
â
Turn-on delay time
td (on) â â
Rise time
tr â â
Turn-off delay time
td (off) â â
Fall time
Total gate charge
tf â â
Qg â â
Gate-source charge
Qgs â â
Gate-drain charge
Qgd â â
75 â pF f=1MHz
10
â
ns VDD â15V
15
â
ns ID= â1.75A
35
â
VGS= â10V
ns RL= 8.57Ω
10
â
ns RG= 10Ω
5.5 7.7 nC VDD â15V, VGS= â5V
1.5 â nC ID= â3.5A
2.0 â nC RL= 4.29Ω, RG= 10Ω
âPulsed
ï¬Body diode characteristics (Source-Drain) (Ta=25ï°C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
VSD â
â
â â1.2 V
âPulsed
Conditions
IS= â1.6A, VGS=0V
Data Sheet
www.rohm.com
3/3
âc 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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