SH8M24_09 Datasheet, PDF (3/4 Pages) Rohm – 4V Drive Nch+Pch MOSFET

SH8M24
P-ch
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −45 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 μA VDS= −45V, VGS=0V
Gate threshold voltage
VGS (th) −1.0 − −2.5 V VDS= −10V, ID= −1mA
−
Static drain-source on-state
resistance
RDS
∗
(on)
−
−
45 63 mΩ ID= −3.5A, VGS= −10V
60 84 mΩ ID= −3.5A, VGS= −4.5V
66 92 mΩ ID= −3.5A, VGS= −4V
Forward transfer admittance
Yfs ^∗ 4.5
−
−
S VDS= −10V, ID= −3.5A
Input capacitance
Ciss
− 1700 −
pF VDS= −10V
Output capacitance
Coss
− 200 −
pF VGS=0V
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ^∗
−
Rise time
tr ^∗ −
Turn-off delay time
td (off) ^∗
−
Fall time
tf ^∗ −
Total gate charge
Qg ^∗ −
Gate-source charge
Qgs ^∗ −
Gate-drain charge
Qgd ^∗ −
135 −
16 −
17 −
70 −
14 −
13.0 18.2
3.6 −
4.7 −
pF f=1MHz
ns VDD −25V
ns ^{ID= −2.0A}
VGS= −10V
ns _RL=12.5Ω
ns RG=10Ω
nC VDD −25V, VGS= −5V
nC ID= −3.5A
nC RL= 7.1Ω, RG= 10Ω
∗ Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
∗ Pulsed
Symbol Min. Typ. Max. Unit
VSD ^∗ −
− −1.2 V
Conditions
IS= −3.5A, VGS=0V
Data Sheet
www.rohm.com
3/3
○^c 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A