SH8K3 Datasheet, PDF (3/4 Pages) Rohm – 4V Drive Nch+Nch MOSFET

SH8K3
Electrical characteristic curves
10000
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
Coss
100
Crss
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
100
10
Ta=125°C
Ta=75°C
1
Ta=25°C
Ta= −25°C
0.1
VDS=10V
Pulsed
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
10000
1000
Ta=125°C
Ta=75°C
Ta=25°C
100 ^{Ta= −25°C}
VGS=10V
Pulsed
10
1
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
10000
1000
tf
td (off)
100
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
tr
10
td (on)
1
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
300
Ta=25°C
Pulsed
250
200
ID=7A
ID=3.5A
150
100
50
0
0 2 4 6 8 10 12 14 16
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10000
1000
Ta=125°C
Ta=75°C
Ta=25°C
100 ^{Ta= −25°C}
VGS=4.5V
Pulsed
10
1
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Data Sheet
10
Ta=25°C
9 VDD=15V
8
ID=7A
RG=10Ω
7 ^Pulsed
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
100
Ta=125°C
10
Ta=75°C
Ta=25°C
Ta= −25°C
1
VGS=0V
Pulsed
0.1
0.01
0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
10000
1000
Ta=125°C
Ta=75°C
Ta=25°C
100 ^{Ta= −25°C}
VGS=4V
Pulsed
10
1
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
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2009.12 - Rev.A