SCS215AG_17 Datasheet, PDF (3/6 Pages) Rohm – SiC Schottky Barrier Diode

SCS215AG
Electrical characteristic curves
Fig.1 V_F - I_F Characteristics
100
Pulsed
10
Ta=175ºC
1 Ta=125ºC
Ta=75ºC
0.1
Ta=25ºC
Ta= 25ºC
0.01
0.001
0.0
0.5 1.0 1.5 2.0 2.5
Forward Voltage : V_F [V]
Datasheet
Fig.2 V_F - I_F Characteristics
25
Pulsed Ta= 25ºC
Ta=25ºC
20
15
10
　⁵
Ta=75ºC
Ta=125ºC
Ta=175ºC
0
0.0 0.5 1.0 1.5 2.0 2.5
Forward Voltage : V_F [V]
Fig.3 V_R - I_R Characteristics
100
Ta=175ºC
10
Ta=125ºC
1
0.1
Ta=75ºC
0.01
Ta=25ºC
0.001
0
Ta= 25ºC
100 200 300 400 500 600
Reverse Voltage : V_R [V]
Fig.4 V_R-Ct Characteristics
1,000
100
Ta=25ºC
f=1MHz
10
0.01 0.1
1
10 100 1000
Reverse Voltage : V_R [V]
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2017.06 - Rev.C