S2308_16 Datasheet, PDF (3/13 Pages) Rohm – N-channel SiC power MOSFET bare die

S2308
Data Sheet
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
g_fs ^*4
C_iss
C_oss
C_rss
V_DS = 10V, I_D = 4A
V_GS = 0V
V_DS = 800V
f = 1MHz
Values
Unit
Min. Typ. Max.
-
1.4
-
S
-
667
-
-
27
-
pF
-
5
-
Effective output capacitance,
energy related
C_o(er)
V_GS = 0V
V_DS = 0V to 500V
-
41
-
pF
Turn - on delay time
Rise time
Turn - off delay time
Fall time
t_d(on) ^{*4 V}_DD ^{= 400V, V}_GS ^{= 18V}
-
19
-
t_r ^*4
t_d(off) ^*4
I_D = 4A
R_L = 100W
-
19
-
ns
-
47
-
t_f ^*4
R_G = 0W
-
29
-
Turn - on switching loss
Turn - off switching loss
E_on ^*4
E_off ^*4
V_DD = 600V, I_D=4A
V_GS = 18V/0V
R_G = 0W, L=500H
*E_on includes diode
reverse recovery
-
57
-
J
-
20
-
lGate Charge characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Q_g ^*4
Q_gs ^*4
V_DD = 400V
I_D = 4A
Q_gd ^{*4 V}_GS ^{= 18V}
V_(plateau) V_DD = 400V, I_D = 4A
Values
Unit
Min. Typ. Max.
-
36
-
-
9
-
nC
-
12
-
-
9.8
-
V
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2016.02 - Rev.C