English
Language : 

RGTV00TS65D Datasheet, PDF (3/13 Pages) Rohm – 650V 50A Field Stop Trench IGBT
◁
RGTV00TS65D
Datasheet
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Input Capacitance
Cies VCE = 30V
-
2890
-
Output Capacitance
Coes VGE = 0V
-
116
-
pF
Reverse Transfer Capacitance
Cres f = 1MHz
-
48
-
Total Gate Charge
Qg VCE = 400V
-
104
-
Gate - Emitter Charge
Qge IC = 50A
-
21
-
nC
Gate - Collector Charge
Qgc VGE = 15V
-
37
-
Turn - on Delay Time
td(on) IC = 50A, VCC = 400V
-
41
-
Rise Time
Turn - off Delay Time
tr
VGE = 15V, RG = 10Ω
-
20
-
ns
td(off) Tj = 25°C
-
142
-
Fall Time
tf Inductive Load
-
38
-
Turn - on Switching Loss
Turn - off Switching Loss
Eon *Eon includes diode
Eoff reverse recovery
-
1.17
-
mJ
-
0.94
-
Turn - on Delay Time
td(on) IC = 50A, VCC = 400V
-
39
-
Rise Time
Turn - off Delay Time
tr
VGE = 15V, RG = 10Ω
-
23
-
ns
td(off) Tj = 175°C
-
167
-
Fall Time
tf Inductive Load
-
80
-
Turn - on Switching Loss
Turn - off Switching Loss
Eon *Eon includes diode
Eoff reverse recovery
-
1.25
-
mJ
-
1.28
-
IC = 200A, VCC = 520V
Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V
FULL SQUARE
-
RG = 100Ω, Tj = 175°C
VCC ≦ 360V
Short Circuit Withstand Time
tsc
VGE = 15V
2
-
-
μs
Tj = 25°C
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
3/11
2017.05 - Rev.A
 ▷