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RGS80TS65D Datasheet, PDF (3/13 Pages) Rohm – 650V 40A Field Stop Trench IGBT
RGS80TS65D
Data Sheet
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Input Capacitance
Cies VCE = 30V
-
1240
-
Output Capacitance
Coes VGE = 0V
-
103
-
pF
Reverse Transfer Capacitance
Cres f = 1MHz
-
16
-
Total Gate Charge
Qg VCE = 300V
-
48
-
Gate - Emitter Charge
Qge IC = 40A
-
12
-
nC
Gate - Collector Charge
Qgc VGE = 15V
-
19
-
Turn - on Delay Time
td(on) IC = 40A, VCC = 400V
-
37
-
Rise Time
Turn - off Delay Time
tr
VGE = 15V, RG = 10Ω
-
17
-
ns
td(off) Tj = 25°C
-
112
-
Fall Time
tf Inductive Load
-
96
-
Turn - on Switching Loss
Turn - off Switching Loss
Eon *Eon includes diode
Eoff reverse recovery
-
1.05
-
mJ
-
1.03
-
Turn - on Delay Time
td(on) IC = 40A, VCC = 400V
-
34
-
Rise Time
Turn - off Delay Time
tr
VGE = 15V, RG = 10Ω
-
28
-
ns
td(off) Tj = 175°C
-
141
-
Fall Time
tf Inductive Load
-
150
-
Turn - on Switching Loss
Turn - off Switching Loss
Eon *Eon includes diode
Eoff reverse recovery
-
1.43
-
mJ
-
1.47
-
IC = 120A, VCC = 520V
Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V
FULL SQUARE
-
Short Circuit Withstand Time
Short Circuit Withstand Time
RG = 50Ω, Tj = 175°C
VCC ≦ 360V
tsc
8
-
-
μs
VGE = 15V, Tj = 25°C
tsc*2
VCC ≦ 360V
6
-
-
μs
VGE = 15V, Tj = 150°C
*2 Design assurance without measurement
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3/11
2016.07 - Rev.A