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RGS00TS65D Datasheet, PDF (3/13 Pages) Rohm – 650V 50A Field Stop Trench IGBT
RGS00TS65D
Data Sheet
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Input Capacitance
Cies VCE = 30V
-
1568
-
Output Capacitance
Coes VGE = 0V
-
134
-
pF
Reverse Transfer Capacitance
Cres f = 1MHz
-
23
-
Total Gate Charge
Qg VCE = 300V
-
58
-
Gate - Emitter Charge
Qge IC = 50A
-
15
-
nC
Gate - Collector Charge
Qgc VGE = 15V
-
24
-
Turn - on Delay Time
td(on) IC = 50A, VCC = 400V
-
36
-
Rise Time
Turn - off Delay Time
tr
VGE = 15V, RG = 10Ω
-
21
-
ns
td(off) Tj = 25°C
-
115
-
Fall Time
tf Inductive Load
-
91
-
Turn - on Switching Loss
Turn - off Switching Loss
Eon *Eon includes diode
Eoff reverse recovery
-
1.46
-
mJ
-
1.29
-
Turn - on Delay Time
td(on) IC = 50A, VCC = 400V
-
37
-
Rise Time
Turn - off Delay Time
tr
VGE = 15V, RG = 10Ω
-
33
-
ns
td(off) Tj = 175°C
-
145
-
Fall Time
tf Inductive Load
-
147
-
Turn - on Switching Loss
Turn - off Switching Loss
Eon *Eon includes diode
Eoff reverse recovery
-
1.97
-
mJ
-
1.85
-
IC = 150A, VCC = 520V
Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V
FULL SQUARE
-
Short Circuit Withstand Time
Short Circuit Withstand Time
RG = 50Ω, Tj = 175°C
VCC ≦ 360V
tsc
8
-
-
μs
VGE = 15V, Tj = 25°C
tsc*2
VCC ≦ 360V
6
-
-
μs
VGE = 15V, Tj = 150°C
*2 Design assurance without measurement
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3/11
2016.07 - Rev.A