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| RB168LAM150 Datasheet, PDF (3/7 Pages) Rohm – Schottky Barrier Diode | |||
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RB168LAM150
lElectrical Characteristic Curves
Data Sheet
1000
100
IFSM
time
1cyc
Ta=25°C
10
1
10
100
TIME : t (ms)
IFSM-t CHARACTERISTICS
1.0
Tj = 150°C
D = 1/2
0.8
Sin(θ=180)
DC
0.6
0.4
0.2
0.0
0.0
0.5
1.0
1.5
2.0
AVERAGE RECTIFIED
FORWARD CURRENT : Io (A)
Io-PF CHARACTERISTICS
70
Tj = 150°C
60
50
40
Sin(θ=180)
30
D = 1/2
20
DC
10
0
0 25 50 75 100 125 150
REVERSE VOLTAGE : VR (V)
VR-PR CHARACTERISTICS
100
10
Rth(j-a)
Rth(j-c)
1
0.001
Substrate conditions:
⢠Material : glass epoxy substrate (FR4)
⢠Size 20mmÃ20mmÃ0.8mm
⢠Both side is all covered w/ copper (35um thickness)
0.01 0.1 1 10 100 1000
TIME : t (s)
Rth-t CHARACTERISTICS
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
3/4
2016.09 - Rev.A
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