QSZ4_1 Datasheet, PDF (3/5 Pages) Rohm – General purpose transistor (isolated transistor and diode)

Transistors
QSZ4
zElectrical characteristic curves
Tr1(PNP)
1000
Ta=100 C
VCE= −2V
Pulsed
10
IC/IB=20/1
Pulsed
10
Ta=25 C
Pulsed
Ta=25 C
1
Ta=−40 C
100
0.1
Ta=−40 C
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.1 DV current gain
vs. collector current
Ta=25 C
Ta=100 C
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
vs. collector current
1
IC/IB=50/1
IC/IB=20/1
IC/IB=10/1
0.1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 Base-emitter saturation voltage
vs. collectir current
10
VBE=2V
Pulsed
Ta=100 C
Ta=25 C
1
Ta=−40 C
0.1
0.01
0.1
1
10
BASE TO EMITTER CURRENT : VBE (V)
Fig.4 Grounded emitter propagation
characteristics
1000
10000
Ta=25 C
Ta=25 C
VCE= −2V
f=100MHz
VCE= −12V
IC/IB=20/1
Pulsed
1000
tstg
100
10
0.01
0.1
1
10
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product
vs. emitter curent
100
tf
tdon
10
tr
1
0.01
0.1
1
10
COLLECTOR CURRENT : IC(A)
Fig.6 Switching time
1000
Cib
100
Cob
10
IC=0A
f=1MHz
Ta=25 C
1
0.001
0.01
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VBE (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.B
3/4