QS5U16 Datasheet, PDF (3/5 Pages) Rohm – Small switching (30V, 2.0A)

Transistors
zElectrical characteristic curves
<MOSFET>
10
VDS=10V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical Transfer Characteristics
QS5U16
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS=4.5V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS=4.0V
Pulsed
10
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
10
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
300
VGS=2.5V
Pulsed
1000
Ta=25°C
Pulsed
200
ID=2A
100
ID=1A
100
Ta=25°C
Pulsed
VGS=2.5V
VGS=4V
VGS=4.5V
10
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
0
0 1 2 3 4 5 6 7 8 9 10
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
10
Ta=125°C
Ta=75°C
Ta=25°C
1 ^{Ta= −25°C}
VGS=0V
Pulsed
0.1
0.01
0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.7 Reverse Drain Current
vs. Source-Drain Current
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
100
Coss
Crss
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
1000
tf
100
td (off)
10
td (on)
tr
Ta=25°C
VDD=15V
VGS=4.5V
RG=10Ω
Pulsed
1
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.9 Switching Characteristics
Rev.A
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