FMY1AT148 Datasheet, PDF (3/5 Pages) Rohm – Emitter common (dual transistors)

Transistors
EMY1 / UMY1N / FMY1A
500
Ta=25˚C
200
VCE=−5V
−3V
−1V
100
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector
current ( I )
500
Ta=100˚C
25˚C
200
−40˚C
100
50
−0.2 −0.5 −1 −2
VCE=−6V
−5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector
current ( II )
−1
Ta=25˚C
−0.5
−0.2
−0.1
−0.05
IC/IB=50
20
10
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( I )
−1
1000
lC/lB=10
Ta=25˚C
VCE=−12V
−0.5
500
−0.2
Ta=100˚C
−0.1
25˚C
−40˚C
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( II )
200
100
50
0.5 1 2
5 10 20
50 100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
20
Cib
10
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cob
5
2
-0.5 -1 -2
-5 -10 -20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Tr2 (NPN)
50
20
10
5
VCE=6V
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.10 Grounded emitter propagation
characteristics
100 _Ta=25˚C
80
60
40
0.50mA
00.4.405mmAA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
20
0.05mA
IB=0A
0
0 0.4
0.8
1.2 1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.11 Grounded emitter output
characteristics ( I )
10
Ta=25˚C
8
30µA
27µA
24µA
21µA
6
18µA
15µA
4
12µA
9µA
6µA
2
3µA
0
IB=0A
0
4
8
12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.12 Grounded emitter output
characteristics ( II )
Rev.A
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