BSM300D12P2E001 Datasheet, PDF (3/11 Pages) Rohm – SiC Power Module

BSM300D12P2E001
Data Sheet
lElectrical characteristics (T_j=25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static drain-source on-state
voltage
V_DS(on) I_D=300A, V_GS=18V
T_j=25°C －
T_j=125°C －
2.2 2.9
3.0 －
V
T_j=150°C － 3.4 4.5
Drain cutoff current
I_DSS V_DS=1200V, V_GS=0V
－ - 3.2 mA
V_GS=0V, I_S=300A
T_j=25°C －
T_j=125°C
1.6 2.1
2.2 -
Source-drain voltage
V_SD
T_j=150°C － 2.4 3.2
V
T_j=25°C － 1.4 －
V_GS=18V, I_S=300A T_j=125°C
1.6 -
T_j=150°C － 1.7 －
Gate-source threshold voltage V_GS(th) V_DS=10V, I_D=68mA
1.6 2.7 4.0
V
Gate-source leakage current
I_GSS
V_GS=22V, V_DS=0V
V_GS= -6V, V_DS=0V
－ － 0.5
mA
-0.5 － －
Switching characteristics
t_d(on)
t_r
t_rr
t_d(off)
t_f
V_GS(on)=18V, V_GS(off)=0V
V_DS=600V
I_D=300A
R_G=0.2W
inductive load
－ 80 －
－ 70 －
－ 50 －
ns
－ 250 －
－ 65 －
Input capacitance
Gate Registance
Ciss V_DS=10V, V_GS=0V,100kHz
R_Gint T_j=25°C
－ 35 －
nF
- 1.6 -
W
NTC Rated Resistance
R25
5.0
kW
NTC B Value
B50/25
3370
K
Stray Inductance
Ls
13 -
nH
Creepage Distance
Terminal to heat sink
-
Terminal to terminal
14.5 -
mm
15.0 -
mm
Clearance Distance
Terminal to heat sink
-
Terminal to terminal
12.0 -
mm
9.0 -
mm
Junction-to-case thermal
resistance
Case-to-heat sink
Thermal resistance
R_th(j-c)
DMOS (1/2 module) *⁴
SBD (1/2 module) *⁴
－ － 0.08
－ － 0.11
K/W
Case to heat sink, per 1 module,
R_th(c-f) _{Thermal grease appied *5}
- 0.035 -
(*4) Measurement of T_c is to be done at the point just beneath the chip.
(*5) Typical value is measured by using thermally conductive grease of λ=0.9W/(m・K).
Eon=Id×Vds
Eoff=Id×Vds
lWaveform for switching test
trr
VDS
90%
Vsurge
90%
10%
2%
ID
10%
2%
VGS ^10%
td(on)
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tr
3/9
2%
90%
td(off)
10% _2%
tf
2015.09 - Rev.A