2SCR542P_09 Datasheet, PDF (3/5 Pages) Rohm – Midium Power Transistors (30V / 5A)

2SCR542P
Electrical characteristic curves
5mA 2.5mA
0.50
2.0mA
0.45
0.40
0.35
1.5mA
0.30
0.25
1.0mA
0.20
0.15
0.10
0.5mA
0.05
Ta=25°C
0.00
0
0.5
1
1.5
2
COLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.1 Typical Output Characteristics
Data Sheet
1000
Ta=25°C
1000
VCE = 2V
VCE = 5V
100
2V
10
1
10
100
1000 10000
COLLECTOR CURRENT : IC[mA]
Fig.2 DC Current Gain vs.
Collector Current ( Ι )
100
Ta=125°C
75°C
25°C
-40°C
10
1
10
100
1000 10000
COLLECTOR CURRENT : IC[mA]
Fig3. DC Current Gain vs.
Collector Current ( ΙΙ )
1
Ta=25°C
0.1
0.01
IC/IB=50
20
10
0.001
1
10
100
1000 10000
COLLECTOR CURRENT : IC[mA]
Fig.4 Collector-Emitter Saturation Voltage
vs. Collector Current ( Ι )
1
IC/IB=20
0.1
Ta=125°C
0.01
75°C
25°C
-40°C
0.001
1
10
100
1000 10000
COLLECTOR CURRENT : IC[mA]
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current ( ΙΙ )
10000
VCE = 2V
1000
100
Ta=125°C
75°C
25°C
-40°C
10
1
0
0.5
1
1.5
BASE TO EMITTER VOLTAGE : VBE[V]
Fig.6 Ground Emitter Propagation
Characteristics
1000
100
10
Ta=25°C
Cib
f=1MHz
IE=0A
IC=0A
Cob
1
0.1
1
10
100
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
Fig.7 Emitter Input Capacitance vs.
Emitter-Base Voltage
Collector Output Capacitance vs.
Collector-Base Voltage
1000 _Ta=25°C
VCE=10V
100
10
10
100
1000
EMITTER CURRENT : IE[mA]
Fig.8 Gain Bandwidth Product vs.
Emitter Current
100 _{Single pulse}
10
1
1ms
10ms
100ms
DC Ta=25°C
0.1
(Mounted on a
recommended land)
DC Ta=25°C
(Mounted on a ceramic board)
0.01
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.9 Safe Operating Area
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2009.12 - Rev.A