US5L9 Datasheet, PDF (2/5 Pages) Rohm – General purpose transistor (isolated transistor and diode)

Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pc
Tj
Tstg
Limits
−15
−12
−6
−1.5
−3
0.7
150
−40 to +125
∗1 Single pulse, Pw=1ms.
∗2 Mounted on a 25mm⁺ 25mm^{+ t}0.8mm CERAMIC SUBSTRATE.
Unit
V
V
V
A
A
∗1
W/ELEMENT ^∗2
°C
°C
Di2
Parameter
Symbol Limits
Peak reverse voltage
VRM
25
Reverse voltage (DC)
VR
20
Average rectified forward current
IF
700
Forward current surge peak (60HZ, 1∞) IFSM
3
Power dissipation
PD
0.5
Junction temperature
Tj
125
Range of storage temperature
Tstg −40 to +125
∗ Mounted on a 25mm⁺ 25mm^{+ t}0.8mm CERAMIC SUBSTRATE.
Unit
V
V
mA
A
W/ELEMENT ^∗
°C
°C
Tr1&Di2
Parameter
Symbol Limits
Unit
0.4
Total power dissipation PD
1.0
W/TOTAL ^∗2
W/TOTAL ^∗1
∗1 Mounted on a 25mm⁺ 25mm^{+ t}0.8mm CERAMIC SUBSTRATE.
∗2 Each terminal mounted on a recommended lanel.
US5L9
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol
Collector-emitter breakdown voltage
BVCEO
Collector-base breakdown voltage
BVCBO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Transition frequency
fT
Collector output capacitance
Cob
Di2
Parameter
Forward voltage
Reverse current
Reverse recovery time
Symbol
VF
IR
trr
Min. Typ. Max. Unit
Conditions
−12
−
−
V IC=−1mA
−15
−
−
V IC=−10µA
−6
−
−
V IE=−10µA
−
−
−100 nA VCB=−15V
−
−
−100 nA VEB=−6V
−
−110 −200 mV IC=−500mA, IB=−25mA
270
−
680
− VCE=−2V, IC=−200mA
−
400
−
MHz VCE=−2V, IE=200mA, f=100MHz
−
12
−
pF VCB=−10V, IE=0mA, f=1MHz
Min.
−
−
−
Typ.
−
−
9
Max.
490
200
−
Unit
Conditions
mV IF=700mA
µA VR=20V
nS IF=IR=100mA, Irr=0.1IR
Rev.A
2/4