UML4N Datasheet, PDF (2/4 Pages) Rohm – General purpose transistor

Transistors
zAbsolute maximum ratings (Ta=25°C)
Di1
Parameter
Symbol Limits
Unit
Average rectified forward current
IO
200
mA
Forward current surge peak (60HZ, 1∞) IFSM
1
A
Reverse voltage (DC)
VR
30
V
Junction temperature
Tj
125
°C
Range of storage temperature
Tstg −55 to +125 °C
Tr2
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
∗ Each terminal mounted on a recommended land.
Limits
−15
−12
−6
−500
−1
120
150
−55 to +125
Unit
V
V
V
mA
A
mW ^∗
°C
°C
UML4N
zElectrical characteristics (Ta=25°C)
Di1
Parameter
Symbol
Forward voltage
VR
Reverse current
IR
Tr2
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−
0.40 0.50
V IF=200mA
−
4.0
30
µA VR=10V
Min. Typ. Max. Unit
Conditions
−12
−
−
V IC=−1mA
−15
−
−
V IC=−10µA
−6
−
−
V IE=−10µA
−
−
−100 nA VCB=−15V
−
−
−100 nA VEB=−6V
− −100 −250 mV IC=−200mA, IB=−10mA
270
−
680
− VCE=−2V, IC=−10mA
−
260
−
MHz VCE=−2V, IE=10mA, f=100MHz
−
6.5
−
pF VCB=−10V, IE=0mA, f=1MHz
zElectrical characteristic curves
Di1
1
100m
10m
1m
100µ
10µ
1µ
0 0.1 0.2 0.3 0.4 0.5 0.6
FORWARD VOLTAGE : VF (V)
Fig.1 Forward characteristics
10m
Ta=125°C
1m
75°C
100µ
10µ
25°C
1µ
−25°C
100n
10n
0
10
20
30
REVERSE VOLTAGE : VR (V)
Fig.2 Reverse characteristics
Rev.A
2/3