UMH9N Datasheet, PDF (2/4 Pages) Rohm – General purpose (dual digital transistors)

Transistors
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Output current
IO
IC (Max.)
Power
dissipation
EMH9,UMH9N
IMH9A
Pd
Junction temperature
Tj
Storage temperature
Tstg
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Limits
50
40
−6
70
100
150 (TOTAL)
300 (TOTAL)
150
−55 to +150
EMH9 / UMH9N / IMH9A
Unit
V
V
mA
∗1
mW
∗2
°C
°C
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Input voltage
VI (off)
−
−
0.3
VCC=5V, IO=100µA
V
VI (on)
1.4
−
−
VO=0.3V, IO=1mA
Output voltage
VO (on)
−
0.1 0.3
V IO/II=5mA/0.25mA
Input current
II
−
− 0.88 mA VI=5V
Output current
IO (off)
−
−
0.5
µA VCC=50V, VI=0V
DC current gain
GI
68
−
−
− VO=5V, IO=5mA
Transition frequency
fT
−
250
−
MHz VCE=10V, IE= −5mA, f=100MHz
∗
Input resistance
R1
7
10
13
kΩ
−
Resistance ratio
R2/R1 3.7 4.7 5.7
−
−
∗ Transition frequency of the device
zElectrical characteristic curves
100
VO=0.3V
50
20
10
5
2
1
500m
Ta=−40°C
25°C
100°C
200m
100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
10m
5m
2m
1m
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
VCC=5V
Ta=100°C
25°C
−40°C
0.5
1
1.5
2
2.5
3
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
VO=5V
500
Ta=100°C
200
25°C
−40°C
100
50
20
10
5
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
Rev.A
2/3