UMH8NTR Datasheet, PDF (2/6 Pages) Rohm – NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

UMH8N / IMH8A
lAbsolute maximum ratings (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation UMH8N
IMH8A
Junction temperature
Range of storage temperature
Data Sheet
Symbol
V_CBO
V_CEO
V_EBO
I_C*1
P_D ^*2
T_j
T_stg
Values
Unit
50
V
50
V
5
V
100
mA
150 (Total)^*3
mW
300 (Total)^*4
mW
150
°C
-55 to +150
°C
lElectrical characteristics(Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
Conditions
Min.
Collector-base breakdown voltage BV_CBO I_C= 50mA
50
Collector-emitter breakdown voltage BV_CEO I_C= 1mA
50
Emitter-base breakdown voltage
BV_EBO I_E= 50mA
5
Collector cut-off current
I_CBO V_CB = 50V
-
Emitter cut-off current
I_EBO V_EB = 4V
-
Collector-emitter saturation voltage V_CE(sat) I_C / I_B= 10mA / 1mA -
DC current gain
h_FE V_CE= 5V , I_C= 1mA 100
Input resistance
R₁
-
7
Transition frequency
f_T ^*1
V_CE = 10V, I_E = -5mA
f = 100MHz
-
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Typ.
-
-
-
-
-
-
250
10
250
Max.
-
-
-
0.5
0.5
0.3
600
13
-
Unit
V
V
V
mA
mA
V
-
kW
MHz
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2013.07 - Rev.B