UMH4NFHA Datasheet, PDF (2/7 Pages) Rohm – General purpose (Dual digital transistor)

UMH4N FHA
　
lAbsolute maximum ratings (T_a = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
　 　 　 　 　 　 　 　 _Datasheet
Symbol
Values
Unit
V_CBO
50
V
V_CEO
50
V
V_EBO
5
V
I_C
100
mA
P_D*1*2
150
mW
T_j
150
℃
T_stg
-55 to +150
℃
lElectrical characteristics (T_a = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BV_CBO I_C = 50μA
Collector-emitter breakdown
voltage
BV_CEO I_C = 1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BV_EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
R₁
I_E = 50μA
V_CB = 50V
V_EB = 4V
I_C = 10mA, I_B = 1mA
V_CE = 5V, I_C = 1mA
-
Transition frequency
f
*3
T
V_CE = 10V, I_E = -5mA,
f = 100MHz
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 Characteristics of built-in transistor.
Values
Unit
Min. Typ. Max.
50 -
-
V
50 -
-
V
5
-
-
V
-
- 500 nA
-
- 500 nA
-
- 300 mV
100 250 600 -
7 10 13 kΩ
- 250 - MHz
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　
　
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