UMG5NTR Datasheet, PDF (2/7 Pages) Rohm – NPN 100mA 50V Complex Digital Transistors

EMG5 / UMG5N
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Data Sheet
Symbol
V_CC
V_IN
I_O
I_C(MAX.)*1
P_D ^*2
T_j
T_stg
Values
Unit
50
V
-6 to +40
V
70
mA
100
mA
150 (Total)^*3
mW
150
°C
-55 to +150
°C
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Input voltage
V_I(off)
V_I(on)
Output voltage
V_O(on)
Input current
I_I
Output current
I_O(off)
DC current gain
G_I
Input resistance
R₁
Resistance ratio
R₂/R₁
Conditions
V_CC = 5V, I_O = 100mA
V_O = 0.3V, I_O = 1mA
I_O / I_I = 5mA / 0.25mA
V_I = 5V
V_CC = 50V, V_I = 0V
V_O = 5V, I_O = 5mA
-
-
Transition frequency
f_T ^*1
V_CE = 10V, I_E = -5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
Min. Typ. Max. Unit
-
-
0.3
V
1.4
-
-
-
0.1
0.3
V
-
-
0.88 mA
-
-
0.5
mA
68
-
-
-
7
10
13
kW
3.7
4.7
5.7
-
-
250
-
MHz
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2012.06 - Rev.B