UMG1NTR Datasheet, PDF (2/8 Pages) Rohm – NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

EMG1 / UMG1N / FMG1A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
EMG1
UMG1N / FMG1A
Junction temperature
Range of storage temperature
Symbol
V_CC
V_IN
I_O
I_C(MAX.)*1
P_D ^*2
T_j
T_stg
Data Sheet
Values
Unit
50
V
-10 to +40
V
30
mA
100
mA
150 (Total)^*3
mW
300 (Total)^*4
mW
150
°C
-55 to +150
°C
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Input voltage
V_I(off)
V_I(on)
Output voltage
V_O(on)
Input current
I_I
Output current
I_O(off)
DC current gain
G_I
Input resistance
R₁
Resistance ratio
R₂/R₁
Conditions
V_CC = 5V, I_O = 100mA
V_O = 0.2V, I_O = 5mA
I_O / I_I = 10mA / 0.5mA
V_I = 5V
V_CC = 50V, V_I = 0V
V_O = 5V, I_O = 5mA
-
-
Transition frequency
f_T ^*1
V_CE = 10V, I_E = -5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Min. Typ. Max. Unit
-
-
0.5
V
3
-
-
-
0.1
0.3
V
-
-
0.36 mA
-
-
0.5
mA
56
-
-
-
15.4 22 28.6 kW
0.8
1
1.2
-
-
250
-
MHz
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2012.06 - Rev.B