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UMF8N Datasheet, PDF (2/5 Pages) Rohm – Power management (dual transistors)
Transistors
!Absolute maximum ratings (Ta=25°C)
Tr1
Parameter
Symbol Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
15
12
6
500
1.0
150(TOTAL)
150
−55~+150
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Unit
V
V
V
mA
A ∗1
mW ∗2
°C
°C
DTr2
Parameter
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IC
IO
PC
Tj
Tstg
Limits
50
−10~+40
100
30
150(TOTAL)
150
−55~+150
∗1 Characteristics of built-in transistor.
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Unit
V
V
mA ∗1
mA
mW ∗2
°C
°C
UMF8N
!Electrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol
Collector-emitter breakdown voltage
BVCEO
Collector-base breakdown voltage
BVCBO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Transition frequency
fT
Collector output capacitance
Cob
DTr2
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗Characteristics of built-in transistor.
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
fT
R1
R2/R1
Min. Typ. Max. Unit
Conditions
12
−
−
V IC=1mA
15
−
−
V IC=10µA
6
−
−
V IE=10µA
−
−
100
nA VCB=15V
−
−
100
nA VEB=6V
−
100 250 mV IC=200mA, IB=10mA
270
−
680
− VCE=2V, IC=10mA
−
320
−
MHz VCE=2V, IE=−10mA, f=100MHz
−
7.5
−
pF VCB=10V, IE=0mA, f=1MHz
Min.
−
3.0
−
−
−
68
−
32.9
0.8
Typ.
−
−
100
−
−
−
250
47
1.0
Max.
0.5
−
300
180
500
−
−
61.1
1.2
Unit
Conditions
V VCC=5V, IO=100µA
V VO=0.3V, IO=2mA
mV VO=10mA, II=0.5mA
µA VI=5V
nA VCC=50V, VI=0V
− VO=5V, IO=5mA
MHz VCE=10V, IE=5mA, f=100MHz ∗
kΩ
−
−
−
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