UMF7N Datasheet, PDF (2/5 Pages) Rohm – Power management (dual transistors)

Transistors
!Absolute maximum ratings (Ta=25°C)
Tr1
Parameter
Symbol Limits
Collector-base voltage
VCBO
15
Collector-emitter voltage
VCEO
12
Emitter-base voltage
VEBO
6
Collector current
IC
500
ICP
1.0
Power dissipation
PC 150(TOTAL)
Junction temperature
Tj
150
Range of storage temperature Tstg −55~+150
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Unit
V
V
V
mA
A ^∗1
mW ^∗2
°C
°C
DTr2
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Collector current
IC
Output current
IO
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
∗1 Characteristics of built-in transistor.
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Limits
50
−10~+20
100
100
150(TOTAL)
150
−55~+150
Unit
V
V
mA ^∗1
mA
mW ^∗2
°C
°C
UMF7N
!Electrical characteristics (Ta=25°C)
Tr1
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
DTr2
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗ Characteristics of built-in transistor.
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
fT
R1
R2/R1
Min. Typ. Max. Unit
Conditions
12
−
−
V IC=1mA
15
−
−
V IC=10µA
6
−
−
V IE=10µA
−
−
100
nA VCB=15V
−
−
100
nA VEB=6V
−
90
250 mV IC=200mA, IB=10mA
270
−
680
− VCE=2V, IC=10mA
−
320
−
MHz VCE=2V, IE=−10mA, f=100MHz
−
7.5
−
pF VCB=10V, IE=0mA, f=1MHz
Min. Typ. Max. Unit
Conditions
−
−
0.5
V VCC=5V, IO=100µA
3.0
−
−
V VO=0.3V, IO=20mA
−
100 300 mV VO=10mA, II=0.5mA
−
−
3.8 mA VI=5V
−
−
0.5
µA VCC=50V, VI=0V
20
−
−
− VO=5V, IO=20mA
−
250
−
MHz VCE=10V, IE=−5mA, f=100MHz ∗
−
2.2
−
kΩ
−
0.8 1.0 1.2
−
−
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