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UMF6N Datasheet, PDF (2/6 Pages) Rohm – Power management (dual transistors) | |||
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Transistors
!Absolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
â15
â12
â6
â500
â1.0
150(TOTAL)
150
â55~+150
Unit
V
V
V
mA
A â1
mW â2
°C
°C
â1 Single pulse PW=1ms
â2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Tr2
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous ID
Pulsed
IDP
Reverse drain
current
Continuous IDR
Pulsed
IDRP
Total power dissipation
PD
Channel temperature
Tch
Range of storage temperature Tstg
Limits
30
±20
100
200
100
200
150(TOTAL)
150
â55~+150
Unit
V
V
mA
mA â1
mA
mA â1
mW â2
°C
°C
â1 PWâ¤10ms Duty cycleâ¤50%
â2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
UMF6N
!Electrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol
Collector-emitter breakdown voltage
BVCEO
Collector-base breakdown voltage
BVCBO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Transition frequency
fT
Collector output capacitance
Cob
Min. Typ. Max. Unit
Conditions
â12
â
â
V IC=â1mA
â15
â
â
V IC=â10µA
â6
â
â
V IE=â10µA
â
â
â100 nA VCB=â15V
â
â
â100 nA VEB=â6V
â â100 â250 mV IC=â200mA, IB=â10mA
270
â
680
â VCE=â2V, IC=â10mA
â
260
â
MHz VCE=â2V, IE=10mA, f=100MHz
â
6.5
â
pF VCB=â10V, IE=0mA, f=1MHz
Tr2
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage
Static drain-source
on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
IGSS
V(BR)DSS
IDSS
VGS(th)
RDS(on)
|Yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min. Typ. Max. Unit
Conditions
â
â
±1
µA VGS=±20V, VDS=0V
30
â
â
V ID=10µA, VGS=0V
â
â
1.0
µA VDS=30V, VGS=0V
0.8
â
1.5
V VDS=3V, ID=100µA
â
5
8
⦠ID=10mA, VGS=4V
â
7
13
⦠ID=1mA, VGS=2.5V
20
â
â
ms VDS=3V, ID=10mA
â
13
â
pF
â
9
â
pF VDS=5V, VGS=0V, f=1MHz
â
4
â
pF
â
15
â
ns
â
35
â
ns ID=10mA, VDD 5V,
VGS=5V, RL=500â¦,
â
80
â
ns RGS=10â¦
â
80
â
ns
2/5
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