UMF21N Datasheet, PDF (2/4 Pages) Rohm – Power management (dual transistors)

Transistors
EMF21 / UMF21N
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
IC
Collector current
ICP
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Limits
−15
−12
−6
−500
−1.0
150(TOTAL)
150
−55~+150
Unit
V
V
V
mA
A ^∗1
mW ^∗2
°C
°C
DTr2
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Collector current
IC
Output current
IO
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
Limits
50
−10~+40
100
50
150(TOTAL)
150
−55~+150
Unit
V
V
mA ^∗1
mA
mW ^∗2
°C
°C
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−12
−
−
V IC=−1mA
−15
−
−
V IC=−10µA
−6
−
−
V IE=−10µA
−
−
−100 nA VCB=−15V
−
−
−100 nA VEB=−6V
−
−100 −250 mV IC=−200mA, IB=−10mA
270
−
680
− VCE=−2V, IC=−10mA
−
260
−
MHz VCE=−2V, IE=10mA, f=100MHz
−
6.5
−
pF VCB=−10V, IE=0mA, f=1MHz
DTr2
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Input voltage
VI(off)
−
VI(on)
3
−
0.5
VCC=5V, IO=100µA
V
−
−
VO=0.3V, IO=10mA
Output voltage
VO(on)
−
0.1 0.3
V IO/II=10mA/0.5mA
Input current
II
−
− 0.88 mA VI=5V
Output current
IO(off)
−
−
0.5
µA VCC=50V, VI=0V
DC current gain
GI
30
−
−
− VO=5V, IO=5mA
Input resistance
R1
7
10
13
kΩ
−
Resistance ratio
R2/R1 0.8
1
1.2
−
−
Transition frequency
fT
−
250
− MHz VCE=10V, IE=−5mA, f=100MHz ∗
∗ Transition frequency of the device
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