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UMD9NFHA Datasheet, PDF (2/10 Pages) Rohm – General purpose (Dual digital transistor)
UMD9N FHA
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol DTr1(NPN) DTr2(PNP) Unit
VCC
VIN
IO
IC(MAX)*1
PD*2*3
Tj
Tstg
50
-50
-6 to 40 -40 to 6
70
-70
100
-100
150
150
-55 to +150
V
V
mA
mA
mW/Total
℃
℃
lElectrical characteristics (Ta = 25°C) <For DTr1(NPN)>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
f
*1
T
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 1mA
IO = 5mA, II = 0.25mA
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
-
-
VCE = 10V, IE = -5mA,
f = 100MHz
Values
Unit
Min. Typ. Max.
-
- 0.3
V
1.4 -
-
- 100 300 mV
-
- 880 μA
-
- 500 nA
68
-
-
-
7 10 13 kΩ
3.7 4.7 5.7 -
- 250 - MHz
lElectrical characteristics (Ta = 25°C) <For DTr2(PNP)>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -1mA
IO = -5mA, II = -0.25mA
VI = -5V
VCC = -50V, VI = 0V
VO = -5V, IO = -5mA
-
-
Transition frequency
f
*1
T
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
Values
Unit
Min. Typ. Max.
-
- -0.3
V
-1.4 -
-
- -100 -300 mV
-
- -880 μA
-
- -500 nA
68
-
-
-
7 10 13 kΩ
3.7 4.7 5.7 -
- 250 - MHz
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20161012 - Rev.001