UMD6NTR Datasheet, PDF (2/8 Pages) Rohm – NPN PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)

EMD6 / UMD6N / IMD6A
Absolute maximum ratings (Ta = 25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
EMD6 / UMD6N
Collector Power dissipation
IMD6A
Junction temperature
Range of storage temperature
Data Sheet
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C ^*2
T_j
T_stg
DTr1(NPN) DTr2(PNP) Unit
50
50
V
50
50
V
5
5
V
100
100
mA
150 (Total)^*3
mW
300 (Total)^*4
mW
150
°C
55 to 150
°C
Electrical characteristics(Ta = 25°C) <For DTr1(NPN)>
Parameter
Symbol
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BV_CBO
BV_CEO
I_C= 50A
I_C= 1mA
Emitter-base breakdown voltage
BV_EBO I_E= 50A
Collector cut-off current
I_CBO V_CB = 50V
Emitter cut-off current
I_EBO
V_EB = 4V
Collector-emitter saturation voltage V_CE(sat) I_C / I_B= 5mA / 0.25mA
DC current gain
h_FE V_CE= 5V, I_C= 1mA
Input resistance
R₁
-
Transition frequency
f_T ^*1
V_CE = 10V, I_E = 5mA
f = 100MHz
Min.
50
50
5
-
-
-
100
3.29
-
Typ.
-
-
-
-
-
-
300
4.7
250
Max.
-
-
-
500
500
300
600
6.11
-
Unit
V
nA
nA
mV
-
-
MHz
Electrical characteristics(Ta = 25°C) <For DTr2(PNP)>
Parameter
Symbol
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
R₁
I_C= 50A
I_C= 1mA
I_E= 50A
V_CB = 50V
V_EB = 4V
I_C / I_B= 5mA / 0.25mA
V_CE= 5V, I_C= 1mA
-
Transition frequency
f_T ^*1
V_CE = 10V, I_E = 5mA
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Min.
50
50
5
-
-
-
100
3.29
-
Typ.
-
-
-
-
-
-
300
4.7
250
Max.
-
-
-
500
500
300
600
6.11
-
Unit
V
nA
nA
mV
-
-
MHz
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2/7
2014.12 - Rev.C