UMD6NFHA Datasheet, PDF (2/8 Pages) Rohm – General purpose (Dual digital transistor)

UMD6N FHA
Datasheet
lAbsolute maximum ratings (T_a = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol DTr1(NPN) DTr2(PNP) Unit
V_CBO
50
-50
V
V_CEO
50
-50
V
V_EBO
5
-5
V
I_C
P_D*1*2
T_j
T_stg
100
-100
150
150
-55 to +150
mA
mW/Total
℃
℃
lElectrical characteristics (T_a = 25°C) <For DTr1(NPN)>
Parameter
Symbol
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
Transition frequency
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
R₁
f
*3
T
I_C = 50μA
I_C = 1mA
I_E = 50μA
V_CB = 50V
V_EB = 4V
I_C = 5mA, I_B = 250μA
V_CE = 5V, I_C = 1mA
-
V_CE = 10V, I_E = -5mA,
f = 100MHz
Values
Unit
Min. Typ. Max.
50
-
-
V
50
-
-
V
5
-
-
V
-
- 500 nA
-
- 500 nA
-
- 300 mV
100 250 600 -
3.29 4.7 6.11 kΩ
- 250 - MHz
lElectrical characteristics (T_a = 25°C) <For DTr2(PNP)>
Parameter
Symbol
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
Transition frequency
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
R₁
f
*3
T
I_C = -50μA
I_C = -1mA
I_E = -50μA
V_CB = -50V
V_EB = -4V
I_C = -5mA, I_B = -0.25mA
V_CE = -5V, I_C = -1mA
-
V_CE = -10V, I_E = 5mA,
f = 100MHz
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 Characteristics of built-in transistor.
Values
Unit
Min. Typ. Max.
-50 -
-
V
-50 -
-
V
-5
-
-
V
-
- -500 nA
-
- -500 nA
-
- -300 mV
100 250 600 -
3.29 4.7 6.11 kΩ
- 250 - MHz
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20161012 - Rev.001