UMB3N_1 Datasheet, PDF (2/3 Pages) Rohm – General purpose (dual digital transistors)

Transistors
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power ^EMB3,UMB3N
dissipation
IMB3A
VCBO
VCEO
VEBO
IC
PC
Junction temperature
Tj
Storage temperature
Tstg
∗^{1 120mW per element must not be exceeded.}
∗2 200mW per element must not be exceeded.
Limits
−50
−50
−5
−100
150 (TOTAL)
300 (TOTAL)
150
−55 to +150
EMB3 / UMB3N / IMB3A
Unit
V
V
V
mA
∗¹
mW
∗²
°C
°C
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
∗ Transition frequency of the device
Symbol Min. Typ. Max. Unit
Conditions
BVCBO −50
−
−
V IC=−50µA
BVCEO −50
−
−
V IC=−1mA
BVEBO
−5
−
−
V IE=−50µA
ICBO
−
−
−0.5 µA VCB=−50V
IEBO
−
−
−0.5 µA VEB=−4V
VCE (sat)
−
− −0.3 V IC/IB=−5mA/−2.5mA
hFE
100 250 600
− VCE=−5V, IC=−1mA
fT
−
250
−
MHz VCE=10mA, IE=−5mA, f=100MHz
∗
R1
3.29 4.7 6.11 kΩ
−
zElectrical characteristic curves
1k
VCE=−5V
500
200
100
Ta=100°C
25°C
50
−40°C
20
10
5
2
1
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
−1
−500m
−200m
−100m
−50m
Ta=100°C
25°C
−40°C
lC/lB=20
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Rev.B
2/2