UMB3NFHA Datasheet, PDF (2/7 Pages) Rohm – General purpose (Dual digital transistor)

UMB3N FHA
　
lAbsolute maximum ratings (T_a = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
　 　 　 　 　 　 　 　 _Datasheet
Symbol
Values
Unit
V_CBO
-50
V
V_CEO
-50
V
V_EBO
-5
V
I_C
-100
mA
P_D*1*2
150
mW
T_j
150
℃
T_stg
-55 to +150
℃
lElectrical characteristics (T_a = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BV_CBO I_C = -50μA
-50 -
-
V
Collector-emitter breakdown
voltage
BV_CEO I_C = -1mA
-50 -
-
V
Emitter-base breakdown voltage BV_EBO I_E = -50μA
-5
-
-
V
Collector cut-off current
I_CBO V_CB = -50V
-
- -500 nA
Emitter cut-off current
I_EBO V_EB = -4V
-
- -500 nA
Collector-emitter saturation voltage V_CE(sat) I_C = -5mA, I_B = -0.25mA -
- -300 mV
DC current gain
h_FE V_CE = -5V, I_C = -1mA
100 250 600 -
Input resistance
R₁
-
3.29 4.7 6.11 kΩ
Transition frequency
f
*3
T
V_CE = -10V, I_E = 5mA,
f = 100MHz
- 250 - MHz
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 Characteristics of built-in transistor.
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　
　
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