UMB2N_12 Datasheet, PDF (2/8 Pages) Rohm – PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

EMB2 / UMB2N / IMB2A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
EMB3 / UMB3N
IMB3A
Junction temperature
Range of storage temperature
Symbol
V_CC
V_IN
I_O
I_C(MAX.)*1
P_D ^*2
T_j
T_stg
Data Sheet
Values
Unit
-50
V
-40 to +10
V
-30
mA
-100
mA
150 (Total)^*3
mW
300 (Total)^*4
mW
150
°C
-55 to +150
°C
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Input voltage
V_I(off)
V_I(on)
Output voltage
V_O(on)
Input current
I_I
Output current
I_O(off)
DC current gain
G_I
Input resistance
R₁
Resistance ratio
R₂/R₁
Conditions
V_CC = -5V, I_O = -100mA
V_O = -0.3V, I_O = -2mA
I_O / I_I = -10mA / -0.5mA
V_I = -5V
V_CC = -50V, V_I = 0V
V_O = -5V, I_O = -5mA
-
-
Transition frequency
f_T ^*1
V_CE = -10V, I_E = 5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Min.
-
-3.0
-
-
-
68
32.9
0.8
-
Typ. Max. Unit
-
-0.5
V
-
-
-0.1 -0.3
V
- -0.18 mA
-
-0.5 mA
-
-
-
47 61.1 kW
1
1.2
-
250
-
MHz
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2012.06 - Rev.B