UMA4N Datasheet, PDF (2/3 Pages) Rohm – General purpose (dual digital transistors)

Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
R1
EMA4 / UMA4N / FMA4A
Min.
Typ.
Max.
Unit
Conditions
−50
−
−
V
IC=−50µA
−50
−
−
V
IC=−1mA
−5
−
−
V
IE=−50µA
−
−
−0.5
µA VCB=−50V
−
−
−0.5
µA VEB=−4V
−
−
−0.3
V
IC/IB=−10mA/−1mA
100
250
600
−
VCE=−5V, IC=−1mA
−
250
−
MHz VCE=−10V, IE=5mA, f=100MHz ∗
7
10
13
kΩ
−
zElectrical characteristics curves
1k
VCE=−5V
500
200
100
Ta=100°C
25°C
50
−40°C
20
10
5
2
1
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
−1
lC/lB=20
−500m
−200m
Ta=100°C
25°C
−100m
−40°C
−50m
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Rev.A
2/2