UMA3N Datasheet, PDF (2/3 Pages) Rohm – Emitter common (dual digital transistors)

Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power ^{EMA3, UMA3N}
PC
dissipation
FMA3A
Junction temperature
Tj
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Tstg
Limits
−50
−50
−5
−100
150 (TOTAL)
300 (TOTAL)
150
−55 to +150
Unit
V
V
V
mA
mW ^∗1
∗²
˚C
˚C
EMA3 / UMA3N / FMA3A
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −50
−
−
V IC=−50µA
Collector-emitter breakdown voltage BVCEO −50
−
−
V IC=−1mA
Emitter-base breakdown voltage
BVEBO −5
−
−
V IE=−50µA
Collector cutoff current
ICBO
−
− −0.5 µA VCB=−50V
DC current transfer ratio
hFE 100 250 600
− VCE/IC=−5V/−1mA
Emitter cutoff current
IEBO
−
− −0.5 µA VEB=−4V
Collector-emitter saturation voltage VCE (sat) −
− −0.3 V IC/IB=−5mA/−0.25mA
Transition frequency
fT
−
250 −
MHz VCE=−10V, IE=5mA, f=100MHz
∗
Input resistance
R1 3.29 4.7 6.11 kΩ
−
∗ Transition frequency of the device
zPackaging specifications
Package
Code
T2R
Type
Basic ordering
unit (pieces)
8000
EMA3
UMA3N
FMA3A
Taping
TR
T148
3000
3000
zElectrical characteristic curves
1k
VCE=−5V
500
200
100
Ta=100˚C
25˚C
50
−40˚C
20
10
5
2
1
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
−1
−500m
−200m
−100m
−50m
Ta=100˚C
25˚C
−40˚C
lC/lB=20
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Rev.A
2/2