UM6K1NTN Datasheet, PDF (2/4 Pages) Rohm – 2.5V Drive Nch+Nch MOS FET

Transistors
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Symbol Min.
Gate-source leakage
IGSS
−
Drain-source breakdown voltage V(BR) DSS 30
Zero gate voltage drain current IDSS
−
Gate threshold voltage
VGS (th) 0.8
Static drain-source on-state
resistance
RDS (on)
−
−
Forward transfer admittance Yfs
20
Input capacitance
Ciss
−
Output capacitance
Coss
−
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on)
−
Rise time
tr
−
Turn-off delay time
td (off)
−
Fall time
tf
−
Typ.
−
−
−
−
5
7
−
13
9
4
15
35
80
80
Max.
±1
−
1.0
1.5
8
13
−
−
−
−
−
−
−
−
Unit
Conditions
µA VGS=±20V, VDS=0V
V ID= 10µA, VGS=0V
µA VDS= 30V, VGS=0V
V VDS= 3V, ID= 100µA
Ω ID= 10mA, VGS= 4V
Ω ID= 1mA, VGS= 2.5V
mS ID= 10mA, VDS= 3V
pF VDS= 5V
pF VGS=0V
pF f=1MHz
ns VDD 5V
ns ^{ID= 10mA}
VGS= 5V
ns _RL=500Ω
ns RG=10Ω
UM6K1N
zElectrical characteristic curves
0.15
4V
3V
3.5V
0.1
2.5V
0.05
2V
VGS=1.5V
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Output Characteristics
200m
VDS=3V
100m Pulsed
50m
20m
10m
5m
2m
Ta=125°C
1m
75°C
0.5m
25°C
−25°C
0.2m
0.1m
0
1
2
3
4
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical Transfer Characteristics
2
VDS=3V
ID=0.1mA
1.5
1
0.5
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate Threshold Voltage vs.
Channel Temperature
50
20
Ta=125°C
75°C
25°C
10
−25°C
5
VGS=4V
Pulsed
2
1
0.5
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current ( )
50
Ta=125°C
20
75°C
25°C
−25°C
10
5
VGS=2.5V
Pulsed
2
1
0.5
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current ( )
15
Ta=25°C
Pulsed
10
5
ID=0.1A
ID=0.05A
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
Rev.B
2/3