SH8M4TB1 Datasheet, PDF (2/6 Pages) Rohm – 4V Drive Nch+Pch MOSFET

SH8M4
N-ch
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30
−
−
V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
1
μA VDS=30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0
−
2.5
V VDS=10V, ID=1mA
−
Static drain-source on-state
resistance
RDS
∗
(on)
−
−
12 18
ID=9.0A, VGS=10V
16 24 mΩ ID=9.0A, VGS=4.5V
17 25
ID=9.0A, VGS=4V
Forward transfer admittance
Yfs ^∗ 7.0
−
−
S ID=9.0A, VDS=10V
Input capacitance
Ciss
− 1190 −
pF VDS=10V
Output capacitance
Coss
− 340 −
pF VGS=0V
Reverse transfer capacitance Crss
− 190 −
Turn-on delay time
td (on) ^∗ −
10
−
Rise time
tr ^∗ −
15
−
Turn-off delay time
td (off) ^∗ −
55
−
Fall time
tf ^∗ −
22
−
Total gate charge
Qg ^∗ −
15
−
Gate-source charge
Qgs ^∗ −
3.0
−
Gate-drain charge
Qgd ^∗ −
6.1
−
∗Pulsed
pF f=1MHz
ns ID=4.5A, VDD 15V
ns VGS=10V
ns RL=3.33Ω
ns RG=10Ω
nC VDD 15V
nC VGS=5V
nC ID=9.0A
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
VSD ^∗
−
− 1.2 V
Conditions
IS=6.4A, VGS=0V
Data Sheet
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2009.12 - Rev.A