SH8KA2 Datasheet, PDF (2/14 Pages) Rohm – 30V Nch+Nch Middle Power MOSFET

SH8KA2
　 　 　 　　 　
lThermal resistance
Parameter
Thermal resistance, junction - ambient (total)
　 　 　 　 　 　 　 　 _Datasheet
　 　 　　　　　　　　　　　　　 　 　 　
Symbol
R_thJA*4
R_thJA*5
Values
Unit
Min. Typ. Max.
-
- 62.5
℃/W
-
- 89.2
lElectrical characteristics (T_a = 25°C) <Tr1 and Tr2>
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate resistance
Forward Transfer
Admittance
V_(BR)DSS V_GS = 0V, I_D = 1mA
ΔV_{(BR)DSS ID = 1mA}
　 ^ΔT_j 　referenced to 25℃
I_DSS V_DS = 30V, V_GS = 0V
I_GSS V_DS = 0V, V_GS = ±20V
V_GS(th) V_DS = V_GS, I_D = 1mA
ΔV_GS(th) I_D = 1mA
　 ^ΔT_j 　referenced to 25℃
R_DS(on)*6 ^{VGS = 10V, ID = 8A}
V_GS = 4.5V, I_D = 6A
R_G f = 1MHz, open drain
|Y_fs|^*6 V_DS = 5V, I_D = 6A
Values
Min. Typ. Max.
　　　
Unit
30 -
-
V
- 21 - mV/℃
-
-
1 μA
-
- ±100 nA
1.0 - 2.5 V
- -3 - mV/℃
- 23 28
mΩ
- 34 43
- 2.5 - Ω
4.2 -
-
S
*1 Pw ≦ 1s, Mounted on a ceramic board (30×30×0.8mm), Limited only by maximum temperature allowed.
*2 Pw ≦ 10μs, Duty cycle ≦ 1%
*3 L ⋍ 0.1mH, V_DD = 15V, R_G = 25Ω, STARTING T_j = 25℃ Fig.3-1,3-2
*4 Mounted on a ceramic board (30×30×0.8mm)
*5 Mounted on a Cu board (25×25×0.8mm)
*6 Pulsed
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　 　
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2/11
　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
20160203 - Rev.001