SH8K5TB1 Datasheet, PDF (2/4 Pages) Rohm – 4V Drive Nch Nch MOSFET

SH8K5
Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30
−
Zero gate voltage drain current IDSS
−
−
−
V ID=1mA, VGS=0V
1
μA VDS=30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0
−
2.5
V VDS=10V, ID=1mA
−
Static drain-source on-state
resistance
RDS
∗
(on)
−
−
59 83
ID=3.5A, VGS=10V
93 130 mΩ ID=3.5A, VGS=4.5V
107 150
ID=3.5A, VGS=4V
Forward transfer admittance
Yfs ^∗ 2.0
−
−
S ID=3.5A, VDS=10V
Input capacitance
Ciss
− 140 −
pF VDS=10V
Output capacitance
Coss
−
45
−
pF VGS=0V
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ^∗
−
Rise time
tr ^∗ −
Turn-off delay time
td (off) ^∗
−
Fall time
tf ^∗ −
Total gate charge
Qg ^∗ −
Gate-source charge
Qgs ^∗
−
Gate-drain charge
Qgd ^∗
−
∗Pulsed
30 − pF f=1MHz
6
−
ns ID=1.75A, VDD 15V
6
−
ns VGS=10V
17 − ns RL=8.57Ω
4
−
ns RG=10Ω
2.5 3.5 nC VDD 15V
0.8 − nC VGS=5V
0.8 − nC ID=3.5A
Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ^∗
−
−
1.2
V IS=6.4A, VGS=0V
Data Sheet
www.rohm.com
2/3
○^c 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A