SH8K11 Datasheet, PDF (2/7 Pages) Rohm – 4V Drive Nch + Nch MOSFET

SH8K11
 Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Symbol Min.
Gate-source leakage
I_GSS
-
Drain-source breakdown voltage V _(BR)DSS 30
Zero gate voltage drain current
I_DSS
-
Gate threshold voltage
V_{GS (th)}
1.0
Static drain-source on-state
resistance
-
R_DS
*
(on)
-
-
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
l Y_fs l* 1.5
C_iss
-
C_oss
-
C_rss
-
t_{d(on) *}
-
t_{r *}
-
t_{d(off) *}
-
t_f *
-
Q_g *
-
Q_gs *
-
Q_{gd *}
-
*Pulsed
　
Typ.
-
-
-
-
70
90
100
-
85
40
20
4
8
18
3
1.9
0.8
0.4
Max.
10
-
1
2.5
98
126
140
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
A V_GS=20V, V_DS=0V
V I_D=1mA, V_GS=0V
A V_DS=30V, V_GS=0V
V V_DS=10V, I_D=1mA
I_D=3.5A, V_GS=10V
m I_D=3.5A, V_GS=4.5V
I_D=3.5A, V_GS=4.0V
S I_D=3.5A, V_DS=10V
pF V_DS=10V
pF V_GS=0V
pF f=1MHz
ns I_D=1.7A, V_DD 15V
ns V_GS=10V
ns R_L=8.8
ns R_G=10
nC I_D=3.5A, V_DD 15V
nC V_GS=5V
nC
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward Voltage
Symbol Min.
V_SD *
-
Typ.
-
*Pulsed
Max. Unit
Conditions
1.2
V I_s=3.5A, V_GS=0V
Data Sheet
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2011.02 - Rev.A