SH8J62 Datasheet, PDF (2/6 Pages) Rohm – 4V Drive Pch+Pch MOSFET

SH8J62
Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −30 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 μA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) −1.0 − −2.5 V VDS= −10V, ID= −1mA
−
Static drain-source on-state
resistance
RDS
∗
(on)
−
40 56 mΩ ID= −4.5A, VGS= −10V
55 77 mΩ ID= −2.5A, VGS= −4.5V
−
60 84 mΩ ID= −2.5A, VGS= −4.0V
Forward transfer admittance
Yfs ^∗ 3.5
−
−
S VDS= −10V, ID= −4.5A
Input capacitance
Ciss
− 800 −
pF VDS= −10V
Output capacitance
Coss
− 120 −
pF VGS=0V
Reverse transfer capacitance Crss
− 110 −
Turn-on delay time
td (on) ^∗ −
7
−
Rise time
tr ^∗ −
15
−
Turn-off delay time
td (off) ^∗ −
70
−
Fall time
tf ^∗ −
50
−
Total gate charge
Qg ^∗ −
8.0
−
Gate-source charge
Qgs ^∗ −
2.5
−
Gate-drain charge
Qgd ^∗ −
3.0
−
∗Pulsed
pF f=1MHz
ns ID= −2.5A
ns ^{VDD −15V}
VGS= −10V
ns _RL=6.0Ω
ns RG=10Ω
nC ^{VDD −15V}
nC
ID= −4.5A
VGS= −5V
nC RL=3.3Ω / RG=10Ω
Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
∗ Pulsed
Symbol Min. Typ. Max. Unit
VSD ^∗ −
− −1.2 V
Conditions
IS= −4.5A, VGS=0V
Data Sheet
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2010.01 - Rev.A