SH8J31 Datasheet, PDF (2/14 Pages) Rohm – -60V Pch +Pch Middle Power MOSFET

SH8J31
　 　 　 　　 　
lThermal resistance
Parameter
Thermal resistance, junction - ambient
total
element
total
　 　 　 　 　 　 　 　 _Datasheet
　 　 　　　　　　　　　　　　　 　 　 　
Symbol
R_thJA*3
R_thJA*4
Values
Unit
Min. Typ. Max.
-
- 62.5
-
- 89.2 ℃/W
-
- 89.2
lElectrical characteristics (T_a = 25°C) <Tr1 and Tr2>
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate resistance
Forward Transfer
Admittance
V_(BR)DSS V_GS = 0V, I_D = -1mA
ΔV_{(BR)DSS ID = -1mA}
　 ^ΔT_j 　referenced to 25℃
I_DSS V_DS = -60V, V_GS = 0V
I_GSS V_DS = 0V, V_GS = ±20V
V_GS(th) V_DS = -10V, I_D = -1mA
ΔV_GS(th) I_D = -1mA
　 ^ΔT_j 　referenced to 25℃
V_GS = -10V, I_D = -4.5A
R_DS(on)*5 V_GS = -4.5V, I_D = -4.5A
V_GS = -4.0V, I_D = -4.5A
R_G f = 1MHz, open drain
|Y_fs|^*5 V_DS = -10V, I_D = -4.5A
Values
Min. Typ. Max.
　　　
Unit
-60 -
-
V
- -60 - mV/℃
-
- -1 μA
-
- ±10 μA
-1.0 - -3.0 V
- 3.0 - mV/℃
- 50 70
- 55 80 mΩ
- 60 85
- 4.0 - Ω
6.5 -
-
S
*1 Pw≦10μs , Duty cycle≦1%
*2 L ⋍ 1mH, V_DD = -30V, R_G = 25Ω, STARTING T_j = 25℃ Fig.3-1,3-2
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (25×25×0.8mm)
*5 Pulsed
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
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